Lateral Epitaxial Growth of Sputtered Al(110) over SiO2 and Its Electromigration Characteristics

S. Yokoyama; H. Ichikawa; S. Shingubara; M. Koyanagi

doi:https://doi.org/10.7567/SSDM.1992.PA4-1

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[PA4-1] Lateral Epitaxial Growth of Sputtered Al(110) over SiO2 and Its Electromigration Characteristics

S. Yokoyama, H. Ichikawa, S. Shingubara, M. Koyanagi (1.Research Center for Integrated Systems, Hiroshima University, 2.Faculty of Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1992.PA4-1

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