[PA4-4] 0.4 μm Contact with Lower Resistivity Metallization Technology for ULSI Applications

M. Sekine, N. Itoh, T. Akimoto, T. Shinmura, D. T. C. Huo, Y. Kakuhara, K. Kajiyana, Y. Yamada, K. Yamazaki, Y. Murao (1.VLSI Development Division NEC Corporation, 2.AT&T Bell Laboratories)

https://doi.org/10.7567/SSDM.1992.PA4-4