[PA4-4] 0.4 μm Contact with Lower Resistivity Metallization Technology for ULSI Applications
M. Sekine、N. Itoh、T. Akimoto、T. Shinmura、D. T. C. Huo、Y. Kakuhara、K. Kajiyana、Y. Yamada、K. Yamazaki、Y. Murao
(1.VLSI Development Division NEC Corporation、2.AT&T Bell Laboratories)
https://doi.org/10.7567/SSDM.1992.PA4-4