0.4 μm Contact with Lower Resistivity Metallization Technology for ULSI Applications

M. Sekine; N. Itoh; T. Akimoto; T. Shinmura; D. T. C. Huo; Y. Kakuhara; K. Kajiyana; Y. Yamada; K. Yamazaki; Y. Murao

doi:https://doi.org/10.7567/SSDM.1992.PA4-4

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜 1992年8月28日
Tsukuba Center Building, Tsukuba, Japan

[PA4-4] 0.4 μm Contact with Lower Resistivity Metallization Technology for ULSI Applications

M. Sekine、N. Itoh、T. Akimoto、T. Shinmura、D. T. C. Huo、Y. Kakuhara、K. Kajiyana、Y. Yamada、K. Yamazaki、Y. Murao (1.VLSI Development Division NEC Corporation、2.AT&T Bell Laboratories)

https://doi.org/10.7567/SSDM.1992.PA4-4

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