The Japan Society of Applied Physics

[PC2-12] Minority-Carrier Lifetime in Heavily Doped GaAs:C

A. P. Heberle, U. Strauss, W. W. Ruhle, K. H. Bachem, T. Lauterbach N. Haegel (1.Max-Planck-Institut fur Festkorperforschung, 2.Fraunhofer-Institut fur Angewandte Festkorperphysik, 3.University of California, Department of Materials and Applied Science)

https://doi.org/10.7567/SSDM.1992.PC2-12