The Japan Society of Applied Physics

[PC2-12] Minority-Carrier Lifetime in Heavily Doped GaAs:C

A. P. Heberle、U. Strauss、W. W. Ruhle、K. H. Bachem、T. Lauterbach N. Haegel (1.Max-Planck-Institut fur Festkorperforschung、2.Fraunhofer-Institut fur Angewandte Festkorperphysik、3.University of California, Department of Materials and Applied Science)

https://doi.org/10.7567/SSDM.1992.PC2-12