Surface Passivation of In0.52Al0.48As Using (NH4)2Sx and P2S5/(NH4)2S

Nobuhide YOSHIDA; Junsuke INO; Masahiro TOTSUKA; Satoru MATSUMOTO

doi:https://doi.org/10.7567/SSDM.1992.PC2-4

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[PC2-4] Surface Passivation of In0.52Al0.48As Using (NH4)2Sx and P2S5/(NH4)2S

Nobuhide YOSHIDA, Junsuke INO, Masahiro TOTSUKA, Satoru MATSUMOTO (1.Department of Electrical Engineering, Faculty of Science and Technology, Keio University)

https://doi.org/10.7567/SSDM.1992.PC2-4

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