High Current Gain Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source MBE Using TMAAl as the Al Source

Tsuyoshi Takahashi; Yasuhiro Yamaguchi; Hideyasu Ando; Naoya Okamoto; Shinji Yamaura; Adarsh Sandhu; Toshio Fujii; Naoki Yokoyama

doi:https://doi.org/10.7567/SSDM.1992.PC3-L8

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[PC3-L8] High Current Gain Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source MBE Using TMAAl as the Al Source

Tsuyoshi Takahashi, Yasuhiro Yamaguchi, Hideyasu Ando, Naoya Okamoto, Shinji Yamaura, Adarsh Sandhu, Toshio Fujii, Naoki Yokoyama (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1992.PC3-L8

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