Solid Phase Recrystallization of Amorphous and MBE-Grown Ge Films on Si Substrates by Annealing under Ultrahigh Pressure

Hiroshi Ishiwara; Takayoshi Satoh; Pak Hong Yee; Akira Sawaoka

doi:https://doi.org/10.7567/SSDM.1992.S-II-17

[S-II-17] Solid Phase Recrystallization of Amorphous and MBE-Grown Ge Films on Si Substrates by Annealing under Ultrahigh Pressure

Hiroshi Ishiwara、Takayoshi Satoh、Pak Hong Yee、Akira Sawaoka (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology、2.NTT Laboratory、3.Laboratory for Engineering Materials, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1992.S-II-17

1992 International Conference on Solid State Devices and Materials

[S-II-17] Solid Phase Recrystallization of Amorphous and MBE-Grown Ge Films on Si Substrates by Annealing under Ultrahigh Pressure