Nitridation of Si Substrate Surface during MOCVD Growth of InN

Akio YAMAMOTO; Hiroyuki KITAJIMA; Mitsunori TSUJINO

doi:https://doi.org/10.7567/SSDM.1992.S-II-21

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[S-II-21] Nitridation of Si Substrate Surface during MOCVD Growth of InN

Akio YAMAMOTO, Hiroyuki KITAJIMA, Mitsunori TSUJINO (1.Department of Electrical and Electronics Engineering, Faculty of Engineering, Fukui University)

https://doi.org/10.7567/SSDM.1992.S-II-21

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