[S-II-8] Reduction of Dislocation Density of GaAs on Si(100) by Low Temperature Growth and Atomic Hydrogen Irradiation

Hirofumi SHIMOMURA、Yoshitaka OKADA、Mitsuo KAWABE (1.Institute of Materials Science, University of Tsukuba)

https://doi.org/10.7567/SSDM.1992.S-II-8