[S-II-9] Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

H. Katahama, K. Asai, Y. Shiba (1.Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.)

https://doi.org/10.7567/SSDM.1992.S-II-9