[S-II-9] Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

H. Katahama、K. Asai、Y. Shiba (1.Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.)

https://doi.org/10.7567/SSDM.1992.S-II-9