The In-Plane-Gate Transistor: Device Simulation and Design of the IPG

E. STEFANOV; A. ASENOV; F. KOCH U. MEINERS; B. E. MAILE; C. WOLK; H. BRUGGER

doi:https://doi.org/10.7567/SSDM.1992.S-III-17

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜 1992年8月28日
Tsukuba Center Building, Tsukuba, Japan

[S-III-17] The In-Plane-Gate Transistor: Device Simulation and Design of the IPG

E. STEFANOV、A. ASENOV、F. KOCH U. MEINERS、B. E. MAILE、C. WOLK、H. BRUGGER (1.Physik-Department, Tech. Univ. Munich、2.Daimler-Benz Research Laboratory、3.EE Dept., Univ. of Glasgow)

https://doi.org/10.7567/SSDM.1992.S-III-17

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