The In-Plane-Gate Transistor: Device Simulation and Design of the IPG

E. STEFANOV; A. ASENOV; F. KOCH U. MEINERS; B. E. MAILE; C. WOLK; H. BRUGGER

doi:https://doi.org/10.7567/SSDM.1992.S-III-17

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[S-III-17] The In-Plane-Gate Transistor: Device Simulation and Design of the IPG

E. STEFANOV, A. ASENOV, F. KOCH U. MEINERS, B. E. MAILE, C. WOLK, H. BRUGGER (1.Physik-Department, Tech. Univ. Munich, 2.Daimler-Benz Research Laboratory, 3.EE Dept., Univ. of Glasgow)

https://doi.org/10.7567/SSDM.1992.S-III-17

▲