[A-3-5] Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in the Ti-Polycide Gate

N. I. Lee, Y. W. Kim, J. W. Ko, I. K. Kim, S. T. Ahn (1.Advanced Tech. Center, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.1993.A-3-5