[A-3-5] Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in the Ti-Polycide Gate

N. I. Lee、Y. W. Kim、J. W. Ko、I. K. Kim、S. T. Ahn (1.Advanced Tech. Center, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.1993.A-3-5