[C-3-5] Mechanism of Multiatomic Step Formation during MOCVD Growth of GaAs on (001) Vicinal Substrate Studied by Atomic Force Microscopy

Jun-ya Ishizaki、Shu Goto、Motoya Kishida、Takashi Fukui、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1993.C-3-5