MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates

Masaki NAGAHARA; Seiro MIYOSHI; Hiroyuki YAGUCHI; Kentaro ONABE; Yasuhiro SHIRAKI; Ryoichi ITO

doi:https://doi.org/10.7567/SSDM.1993.D-1-4

[D-1-4] MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates

Masaki NAGAHARA, Seiro MIYOSHI, Hiroyuki YAGUCHI, Kentaro ONABE, Yasuhiro SHIRAKI, Ryoichi ITO (1.Department of Applied Physics, The University of Tokyo, 2.Research Center for Advanced Science and Technology, The University of Tokyo)

https://doi.org/10.7567/SSDM.1993.D-1-4

1993 International Conference on Solid State Devices and Materials

[D-1-4] MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates