[D-2-2] Formation of Strain-Free GaAs-On-Si Structures by Annealing under Ultrahigh Pressure

Hiroshi Ishiwara, Tomohisa Hoshino, Masakazu Usui, Hisashi Katahama (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology, 2.Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.)

https://doi.org/10.7567/SSDM.1993.D-2-2