[D-2-2] Formation of Strain-Free GaAs-On-Si Structures by Annealing under Ultrahigh Pressure

Hiroshi Ishiwara、Tomohisa Hoshino、Masakazu Usui、Hisashi Katahama (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology、2.Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.)

https://doi.org/10.7567/SSDM.1993.D-2-2