The Japan Society of Applied Physics

[D-3-4] 1.798μm Intersubband Transition in InGaAs/AlAs Pseudomorphic Quantum Well Structures

Y. Hirayama, J. H. Smet, L. H. Peng, C. G. Fonstad, E. P. Ippen (1.Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, 2.On leave from Toshiba Co., R & D Center, 3.Division of Appl. Sciences, Harvard Univ.)

https://doi.org/10.7567/SSDM.1993.D-3-4