Room Temperature Pulsed Operation of 1.5μm VCSELDs with an Optimized MQW Active Layer

K. Uomi; S. J. B. Yoo; A. Scherer; R. Bhat; N. C. Andreadakis; C. E. Zah; M. A. Koza; T. P. Lee

doi:https://doi.org/10.7567/SSDM.1993.D-6-1

[D-6-1] Room Temperature Pulsed Operation of 1.5μm VCSELDs with an Optimized MQW Active Layer

K. Uomi、S. J. B. Yoo、A. Scherer、R. Bhat、N. C. Andreadakis、C. E. Zah、M. A. Koza、T. P. Lee (1.Central Research Laboratory, Hitachi Ltd.、2.Bell Communications Research)

https://doi.org/10.7567/SSDM.1993.D-6-1

1993 International Conference on Solid State Devices and Materials

[D-6-1] Room Temperature Pulsed Operation of 1.5μm VCSELDs with an Optimized MQW Active Layer