Extremely Low-Noise InP-Based Lattice-Matched HEMT Grown by MOCVD

Shinobu Fujita; Takao Noda; Aki Wagai; Shigehiro Hosoi; Yasuo Ashizawa

doi:https://doi.org/10.7567/SSDM.1993.LC-18

1993 International Conference on Solid State Devices and Materials

Aug 29, 1993 - Sep 1, 1993
Makuhari Messe, Chiba, Japan

[LC-18] Extremely Low-Noise InP-Based Lattice-Matched HEMT Grown by MOCVD

Shinobu Fujita, Takao Noda, Aki Wagai, Shigehiro Hosoi, Yasuo Ashizawa (1.Research and Development Center, Toshiba Corporation, 2.Microelectronics Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1993.LC-18

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