[PB-1-10] Deep Level Transient Spectroscopic Investigations of Boron Doped Si and Si/Si1-xGex/Si Layers Grown by MBE

J. C. Brighten、I. D. Hawkins、A. R. Peaker、R. A. Kubiak、E. H. C. Parker、T. E. Whall (1.Department of Physics, University of Warwick、2.Centre for Electronic Materials, UMIST)

https://doi.org/10.7567/SSDM.1993.PB-1-10