Deep Level Transient Spectroscopic Investigations of Boron Doped Si and Si/Si1-xGex/Si Layers Grown by MBE

J. C. Brighten; I. D. Hawkins; A. R. Peaker; R. A. Kubiak; E. H. C. Parker; T. E. Whall

doi:https://doi.org/10.7567/SSDM.1993.PB-1-10

[PB-1-10] Deep Level Transient Spectroscopic Investigations of Boron Doped Si and Si/Si1-xGex/Si Layers Grown by MBE

J. C. Brighten, I. D. Hawkins, A. R. Peaker, R. A. Kubiak, E. H. C. Parker, T. E. Whall (1.Department of Physics, University of Warwick, 2.Centre for Electronic Materials, UMIST)

https://doi.org/10.7567/SSDM.1993.PB-1-10

1993 International Conference on Solid State Devices and Materials

[PB-1-10] Deep Level Transient Spectroscopic Investigations of Boron Doped Si and Si/Si1-xGex/Si Layers Grown by MBE