Ultrashallow Junction Formation Using Low-Temperature Selective Si1-xGex CVD

Fumitaka Honma; Junichi Murota; Kinya Goto; Takahiro Maeda; Yasuji Sawada

doi:https://doi.org/10.7567/SSDM.1993.PB-1-6

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜 1993年9月1日
Makuhari Messe, Chiba, Japan

[PB-1-6] Ultrashallow Junction Formation Using Low-Temperature Selective Si1-xGex CVD

Fumitaka Honma、Junichi Murota、Kinya Goto、Takahiro Maeda、Yasuji Sawada (1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1993.PB-1-6

▲