[PB-1-7] Activation Energy of Si1-xGex Epitaxial Growth Rate Using Si2H6 and GeH4

Tohru Aoyama、Keiko Miyanaga、Toru Tatsumi (1.ULSI Device Development Laboratories, NEC Corporation、2.Microelectronics Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1993.PB-1-7