Activation Energy of Si1-xGex Epitaxial Growth Rate Using Si2H6 and GeH4

Tohru Aoyama; Keiko Miyanaga; Toru Tatsumi

doi:https://doi.org/10.7567/SSDM.1993.PB-1-7

1993 International Conference on Solid State Devices and Materials

Aug 29, 1993 - Sep 1, 1993
Makuhari Messe, Chiba, Japan

[PB-1-7] Activation Energy of Si1-xGex Epitaxial Growth Rate Using Si2H6 and GeH4

Tohru Aoyama, Keiko Miyanaga, Toru Tatsumi (1.ULSI Device Development Laboratories, NEC Corporation, 2.Microelectronics Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1993.PB-1-7

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