[PB-3-1] A 1.13um2 Memory Cell Technology for Reliable 3.3V 64M NAND EEPROMs

S. Aritome、K. Hatakeyama、T. Endoh、T. Yamaguchi、S. Shuto、H. Iizuka、T. Maruyama H. Watanabe、G. J. Hemink、T. Tanaka、M. Momodomi、K. Sakui、R. Shirota (1.ULSI Research Center, TOSHIBA Corporation)

https://doi.org/10.7567/SSDM.1993.PB-3-1