Latch-up Suppressed IGBT by the Deep P+ Ion Implantation under the n+ Source

Byeong-Hoon Lee; Chong-Man Yun; Han-Soo Kim; Yearn-Ik Choi; Min-Koo Han

doi:https://doi.org/10.7567/SSDM.1993.PB-3-14

1993 International Conference on Solid State Devices and Materials

Aug 29, 1993 - Sep 1, 1993
Makuhari Messe, Chiba, Japan

[PB-3-14] Latch-up Suppressed IGBT by the Deep P+ Ion Implantation under the n+ Source

Byeong-Hoon Lee, Chong-Man Yun, Han-Soo Kim, Yearn-Ik Choi, Min-Koo Han (1.Dept. of Electrical Eng. Seoul Nat'l Univ., 2.Dept. of Electronics Eng. Ajou Univ.)

https://doi.org/10.7567/SSDM.1993.PB-3-14

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