Effect of Radical Oxygen for Epitaxial Growth of Al2O3 on Si

Kiyoteru Hayama; Makoto Ishida; Tetsuro Nakamura

doi:https://doi.org/10.7567/SSDM.1993.PC-1-23

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜 1993年9月1日
Makuhari Messe, Chiba, Japan

[PC-1-23] Effect of Radical Oxygen for Epitaxial Growth of Al2O3 on Si

Kiyoteru Hayama、Makoto Ishida、Tetsuro Nakamura (1.Technology Development Center, Department of Electric & Electronic Engineering, Toyohashi University of Technology)

https://doi.org/10.7567/SSDM.1993.PC-1-23

▲