[PC-1-8] Single Crystalline Si MOSFETs Using High-Quality Gate SiO2 Deposited at 300℃ by Remote Plasma Technique Takashi FUYUKI、Tohru OKA、Hiroyuki MATSUNAMI (1.Dept. Elect. Eng., Kyoto Univ.) https://doi.org/10.7567/SSDM.1993.PC-1-8
