Annealing Properties of N-Doped CZ-SI Crystals

C. S. Chen; C. F. Li; F. Dai; D. R. Yang; H. N. Yao

doi:https://doi.org/10.7567/SSDM.1993.PC-2-1

1993 International Conference on Solid State Devices and Materials

Aug 29, 1993 - Sep 1, 1993
Makuhari Messe, Chiba, Japan

[PC-2-1] Annealing Properties of N-Doped CZ-SI Crystals

C. S. Chen, C. F. Li, F. Dai, D. R. Yang, H. N. Yao (1.Department of Physics, Wuhan University, 2.Semiconductor Materials Institute, Zhejiang University)

https://doi.org/10.7567/SSDM.1993.PC-2-1

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