[PC-2-11] Electron Tunneling Through Ultra-Thin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces

M. Hiroshima、T. Yasaka、S. Miyazaki、M. Hirose (1.Department of Electrical Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1993.PC-2-11