Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface

Kazuaki OHISHI; Hiroshi NOHIRA; Yuichi SHIMIZU; Yoshinari TAMURA; Takeo HATTORI

doi:https://doi.org/10.7567/SSDM.1993.PC-2-4

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜 1993年9月1日
Makuhari Messe, Chiba, Japan

[PC-2-4] Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface

Kazuaki OHISHI、Hiroshi NOHIRA、Yuichi SHIMIZU、Yoshinari TAMURA、Takeo HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology)

https://doi.org/10.7567/SSDM.1993.PC-2-4

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