A Refractory WNx/W Self-Aligned Gate GaAs Power MESFET for 1.9-GHz Digital Mobile Communication System Operating with a Single Low Voltage Supply

Masami Nagaoka; Kenji Ishida; Takashi Hashimoto; Misao Yoshimura; Yoshikazu Tanabe; Masakatsu Mihara; Yoshiaki Kitaura; Naotaka Uchitomi

doi:https://doi.org/10.7567/SSDM.1993.PD-2-1

[PD-2-1] A Refractory WNx/W Self-Aligned Gate GaAs Power MESFET for 1.9-GHz Digital Mobile Communication System Operating with a Single Low Voltage Supply

Masami Nagaoka、Kenji Ishida、Takashi Hashimoto、Misao Yoshimura、Yoshikazu Tanabe、Masakatsu Mihara、Yoshiaki Kitaura、Naotaka Uchitomi (1.Toshiba R&D Center)

https://doi.org/10.7567/SSDM.1993.PD-2-1

1993 International Conference on Solid State Devices and Materials

[PD-2-1] A Refractory WNx/W Self-Aligned Gate GaAs Power MESFET for 1.9-GHz Digital Mobile Communication System Operating with a Single Low Voltage Supply