Semi-Insulating, p-type, and n-type Doping in AlSb, GaSb, and AlSb/InAs by a Single Native Defect

Jun Shen; Saied Tehrani; Herb Goronkin; Gary Kramer; Marilyn Adam; John D. Dow

doi:https://doi.org/10.7567/SSDM.1993.PD-2-10

[PD-2-10] Semi-Insulating, p-type, and n-type Doping in AlSb, GaSb, and AlSb/InAs by a Single Native Defect

Jun Shen、Saied Tehrani、Herb Goronkin、Gary Kramer、Marilyn Adam、John D. Dow (1.Motorola Inc., Phoenix Corporate Research Lab、2.Department of Physics and Astronomy, Arizona State University)

https://doi.org/10.7567/SSDM.1993.PD-2-10

1993 International Conference on Solid State Devices and Materials

[PD-2-10] Semi-Insulating, p-type, and n-type Doping in AlSb, GaSb, and AlSb/InAs by a Single Native Defect