[PD-2-6] A Novel Approach for the Fabrication of Highly Stable Be-Doped InGaAs/InP HBTs by ALE/MOVPE Hybrid Process

Yasuo MATSUMIYA、Yoshiki SAKUMA、Hisao SHIGEMATSU、Osamu UEDA、Naoki YOKOYAMA、Kazuo NAKAJIMA (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1993.PD-2-6