Fabrication of InGaAs Wires by Preferential MBE Growth on Corrugated InP Substrate

H. Fujikura; T. Iwa-ana; H. Hasegawa

doi:https://doi.org/10.7567/SSDM.1993.PD-5-5

1993 International Conference on Solid State Devices and Materials

Aug 29, 1993 - Sep 1, 1993
Makuhari Messe, Chiba, Japan

[PD-5-5] Fabrication of InGaAs Wires by Preferential MBE Growth on Corrugated InP Substrate

H. Fujikura, T. Iwa-ana, H. Hasegawa (1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering Hokkaido University)

https://doi.org/10.7567/SSDM.1993.PD-5-5

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