Growth of SiGe Layer on Si(100) Substrate Using Disilane Gas and Thermally Evaporated Ge in Gas-Source MBE

Kinam Kim; Jeoung Ju Lee; Rajat Jhanjee; K. L. Wang

doi:https://doi.org/10.7567/SSDM.1993.S-I-3-3

[S-I-3-3] Growth of SiGe Layer on Si(100) Substrate Using Disilane Gas and Thermally Evaporated Ge in Gas-Source MBE

Kinam Kim, Jeoung Ju Lee, Rajat Jhanjee, K. L. Wang (1.Device Research Laboratory, 66-147B Engineering IV, Department of Electrical Engineering, University of California)

https://doi.org/10.7567/SSDM.1993.S-I-3-3

1993 International Conference on Solid State Devices and Materials

[S-I-3-3] Growth of SiGe Layer on Si(100) Substrate Using Disilane Gas and Thermally Evaporated Ge in Gas-Source MBE