Improvements in Si and GeSi Material Quality and 2DHG Mobilities Grown by MBE

R. A. Kubiak; E. Basaran; D. W. Smith; A. D. Plews; J. Brighten; S. M. Newstead; P. Phillips; T. E. Whall; E. H. C. Parker

doi:https://doi.org/10.7567/SSDM.1993.S-I-3-5

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜 1993年9月1日
Makuhari Messe, Chiba, Japan

[S-I-3-5] Improvements in Si and GeSi Material Quality and 2DHG Mobilities Grown by MBE

R. A. Kubiak、E. Basaran、D. W. Smith、A. D. Plews、J. Brighten、S. M. Newstead、P. Phillips、T. E. Whall、E. H. C. Parker (1.Physics Department, University of Warwick)

https://doi.org/10.7567/SSDM.1993.S-I-3-5

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