Improvements in Si and GeSi Material Quality and 2DHG Mobilities Grown by MBE

R. A. Kubiak; E. Basaran; D. W. Smith; A. D. Plews; J. Brighten; S. M. Newstead; P. Phillips; T. E. Whall; E. H. C. Parker

doi:https://doi.org/10.7567/SSDM.1993.S-I-3-5

[S-I-3-5] Improvements in Si and GeSi Material Quality and 2DHG Mobilities Grown by MBE

R. A. Kubiak, E. Basaran, D. W. Smith, A. D. Plews, J. Brighten, S. M. Newstead, P. Phillips, T. E. Whall, E. H. C. Parker (1.Physics Department, University of Warwick)

https://doi.org/10.7567/SSDM.1993.S-I-3-5

1993 International Conference on Solid State Devices and Materials

[S-I-3-5] Improvements in Si and GeSi Material Quality and 2DHG Mobilities Grown by MBE