[S-I-4-4] Surface Hydrogen Effects on Ge Surface Segregation During Gas Source MBE

N. Ohtani、S. M. Mokler、M. H. Xie、J. Zhang、B. A. Joyce (1.Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, University of London)

https://doi.org/10.7567/SSDM.1993.S-I-4-4