Strong Direct Band-Edge Photoluminescence from Si/Si1-xGex/Si Quantum Well Grown by Molecular Beam Epitaxy with Post Annealing

Akio NISHIDA; Kiyokazu NAKAGAWA; Toshikazu SHIMADA; Susumu FUKATSU; Yasuhiro SHIRAKI

doi:https://doi.org/10.7567/SSDM.1993.S-I-6-2

[S-I-6-2] Strong Direct Band-Edge Photoluminescence from Si/Si1-xGex/Si Quantum Well Grown by Molecular Beam Epitaxy with Post Annealing

Akio NISHIDA、Kiyokazu NAKAGAWA、Toshikazu SHIMADA、Susumu FUKATSU、Yasuhiro SHIRAKI (1.Central Research Laboratory, Hitachi Ltd.、2.Research Center of Advanced Science and Technology (RCAST), The University of Tokyo)

https://doi.org/10.7567/SSDM.1993.S-I-6-2

1993 International Conference on Solid State Devices and Materials

[S-I-6-2] Strong Direct Band-Edge Photoluminescence from Si/Si1-xGex/Si Quantum Well Grown by Molecular Beam Epitaxy with Post Annealing