Electron Transitions by Normally Incident Light in Si1-xGex/Ge Multiple Quantum Wells Grown on Si(100)

Chanho Lee; S. K. Chun; Kang L. Wang

doi:https://doi.org/10.7567/SSDM.1993.S-I-6-4

[S-I-6-4] Electron Transitions by Normally Incident Light in Si1-xGex/Ge Multiple Quantum Wells Grown on Si(100)

Chanho Lee, S. K. Chun, Kang L. Wang (1.Device Research Laboratory, 64-127B Engineering IV Electrical Engineering Department University of California)

https://doi.org/10.7567/SSDM.1993.S-I-6-4

1993 International Conference on Solid State Devices and Materials

[S-I-6-4] Electron Transitions by Normally Incident Light in Si1-xGex/Ge Multiple Quantum Wells Grown on Si(100)