[S-I-8-4] Epitaxial Growth of Strained Si1-yCy Alloy on Si(100) by Ultrahigh Vacuum Chemical Vapor Deposition Using Si2H6 and C2H2

Masayuki Hiroi、Keiko Miyanaga、Toru Tatsumi (1.Microelectronics Research Labs., NEC Corporation)

https://doi.org/10.7567/SSDM.1993.S-I-8-4