[S-II-18] Analysis of Anomalously Large Junction Leakage Current of Nickel Silicided N-Type Diffused Layer and Its Improvement

T. Ohguro、T. Morimoto、Y. Ushiku、H. Iwai (1.ULSI Laboratories, Research and Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1993.S-II-18