Epitaxial CoSi2 Layer Formation Technology on (100) Si and Its Application for Reduced Leakage, Ultra Shallow p+/n Junction

S. Ogawa; J. A. Fair; M. L. A. Dass; E. C. Jones; T. Kouzaki; N. W. Cheung; D. B. Fraser

doi:https://doi.org/10.7567/SSDM.1993.S-II-19

[S-II-19] Epitaxial CoSi2 Layer Formation Technology on (100) Si and Its Application for Reduced Leakage, Ultra Shallow p+/n Junction

S. Ogawa、J. A. Fair、M. L. A. Dass、E. C. Jones、T. Kouzaki、N. W. Cheung、D. B. Fraser (1.Semiconductor Research Center, Matsushita Electric Co.、2.Varian, Ginzton Research Center、3.Intel Corporation、4.Electrical Engineering and Computer Sciences, University of California at Berkeley)

https://doi.org/10.7567/SSDM.1993.S-II-19

1993 International Conference on Solid State Devices and Materials

[S-II-19] Epitaxial CoSi2 Layer Formation Technology on (100) Si and Its Application for Reduced Leakage, Ultra Shallow p+/n Junction