[S-II-19] Epitaxial CoSi2 Layer Formation Technology on (100) Si and Its Application for Reduced Leakage, Ultra Shallow p+/n Junction

S. Ogawa, J. A. Fair, M. L. A. Dass, E. C. Jones, T. Kouzaki, N. W. Cheung, D. B. Fraser (1.Semiconductor Research Center, Matsushita Electric Co., 2.Varian, Ginzton Research Center, 3.Intel Corporation, 4.Electrical Engineering and Computer Sciences, University of California at Berkeley)

https://doi.org/10.7567/SSDM.1993.S-II-19